Dr. Hongchao Liu

Dr. Liu has more than 20 years’ semiconductor industry and more than 10 years’ experience with rich experience and unique understanding of technology industrialization and internationalization. His academic in materials science includes Shanghai Institute of Ceramics, Chinese Academy of Sciences, Muenster University in Germany, Nagoya Institute of Technology in Japan. He industry career covered China Resources Microelectronics, ASMC (Now GtaSemi). Dr. Liu received his BS degree in physical chemistry from Sichuan University, PhD in Materials Science from Shanghai Institute of Ceramics, Chinese Academy of Sciences. He held a Postdoc position in Nagoya Institute of Technology, and received a Young Scientist Award by Asian Crystallography Association. He was awarded an Alexander von Humboldt Research Fellowship in 2000. S. He has authored more than 30 papers, and holds over 40 patents. His research covers semiconductor materials, devices and processing.

The challenges in getting an reliable SiC Device

SiC power device is becoming crucial in new energy industry, especially in driving the BEV car to penetrate the market. However, comparing with Si devices, SiC devices are prevailing their applications, since making SiC devices reliable is still challenging. The reliability issues might arise from substrates, epi, processing, assembly, even the final test and application. In this presentation, the defects from different processing stages are sampled, and their impacts on device reliability are outlined. It can be seen that effective tools and more reliable data are needed for screening those flawed devices. In YASC, we are introducing new tools, accumulating data, and know-how to make the SiC device reliable and robust.

+ Panel Moderator
Topic: How Chinese local makers get ready for power the EV?