TK Gu

ACADEMIC RECORD:

Ph.D of Electronic Engineering of Taiwan National Chao-Tung University
EMBA of Taiwan National Taiwan University

PROFESSIONAL SKILL

• Semiconductor device physics and process technology
• Advanced CMOS Process Development and Integration
• Wide bandgap power electronics’ SiC & GaN/Si devices
• Next generation non-volatile memory technologies (MRAM/RRAM)
• 3D IC integration & packaging technologies
• R&D and operation management

WORK EXPERIENCE

• Hunan Sanan Semiconductor Co., Ltd.: General Management Assistant and Technology Development Center Senior Expert
• Hunan Sanan Chip fab pilot run task force leader
• Advanced process technology platform development
• Foundry business general management
• Establish Taiwan first 6 inch DNA chip manufacturing fab
• Wide bandgap high power electronic devices
• TSV based 3DIC technology
• Next generation non-volatile memory technology
• Advanced Graphic Process technology co-development
• n Foundry interface & management
• n Product yield improvement & CP/FT/SLT management
• SiS (UMC 8S) 150nm~90nm Logic process development and production transferring
• n 130nm~90nm Cu/low-k (k<3) integration process development for GPUs
• Product mass production yield enhancement (3D GPU, IGP Chipset, SoC)

International conference & industrial consortium

• Wide bandgap power electronics consortium (WEPC) chief secretary
• International wide bandgap power electronics symposia host & chief secretary
• 3DIC technology consortium (AdSTAC) chief secretary
• Taiwan VLSI-TSA symposia host & chief secretary
• Taiwan new non-volatile memory symposia host & chief secretary
• SEMI 3DS-IC standard Taiwan Technical Committee co-chair

Rewards: Total honors/awards > 15 times

PUBLICATION:

• n patents> 34, 15 international journals/letters >15 and international conference papers >50

How vertical integration empower the SiC power device foundry?

Thanks to its wideband gap and superior material characteristic, SiC based power electronic device is now becoming a rising star in many killer applications, for examples, automotive, PV, fast charger, PFC, …..etc. However, the material cost (i.e. substrate and epitaxial) typically dominate the 50%~65% cost in overall SiC power devices. It will significantly delay the real market explosion of SiC power electronics. Contrast to conventional horizontally divided supply chain in Si based industry, vertically integration is becoming an attractive way to reduce the overall cost and ensure the shipping quality in SiC power electronic products. Many SiC players are therefore toward IDM (Integrated device manufacturer) model accordingly. However, it is still not the case in power electronic foundry business. Especially in SiC, the dominated foundry player primary focus on wafer process only. The materials (i.e. substrate and epitaxial) is either purchased externally or cosigned by customers. The SiC device foundry typically perform wafer processing service only because of lack of technology, not familiar in IDM model, or conservative in capital investment. It often leads to the consequence of high COO and quality accountability attribution issue to end customers especially based on currently horizon foundry service business model. We, Hunan Sanan Semiconductor Inc. (SAIC) are aiming to resolve this issue to empower our foundry customers by clustering facilities of 4H SiC crystal growth, substrate, epitaxial, chip processing and assembly & testing in ChungSar to establish a China-first vertically integration supply chain. In this talk, the power of vertical integration in foundry service will be demonstrated.