Dr. Tamara Baksht

Tamara女士出生成长于俄罗斯，并在俄罗斯托木斯克国立大学学习哲学和物理学。之后，她在以色列特拉维夫大学获得了电气工程博士学位，专注于 GaAs 和 GaN HEMT的研究。她开始在以色列飞机工业公司 Gal-El (MMIC) 从事 GaN HEMT 的研究。

Tamara 是 GaN 晶体管设计和开发的先驱之一，涵盖广泛的功率和频率范围。她拥有多年运行多学科 GaN 项目、制定工作计划、预算、报告、将产品投入生产以及提供客户支持的经验。

2010 年，Tamara 与 III-V 半导体技术专家 Gregory Bunin 共同创立了 VisIC Technologies，从那时起她就一直领导该公司

用于电动汽车逆变器的氮化镓 HEMT：突破与挑战

The mobility industry is living through the most dramatic changes since the invention of the internal combustion engine and the standardization of the manufacturing process. Society and governments are looking for zero-emission transport, while car makers are seeking the most efficient way to manufacture low-cost and long-distance electric cars. In this context, inverter efficiency became the critical performance parameter, and semiconductors with low loss switching energy, such as SiC and GaN are getting into the spotlight. In this keynote the successful development of a three- phase GaN-based inverter reference design with 400V bus voltage and 400ARMS current is discussed and the results are presented. The major steps on the way from semiconductor chip design, through module development and to full current inverter operation are discussed, chosen solutions explained and results are presented. The main challenges include robust high current > 100A GaN die, with low parametric shift because of repetitive unclamped switching tests up to 1600V; driving 4 dies in parallel to obtain equal current sharing, smooth waveform at needed current and obtaining low voltage overshoots on the gate and on the drain.