Dr. KK Kuo

Dr. KK Kuo is Vice President of ATX Group R&D Center, responsible for development of new technology, introduction of high technology. Dr. Kuo has over 22 years’ experience in semiconductor industry, good at new product development of RF modules, sensors, high reliability and intelligent automotive electronics, IoT IC and smart mobile communications. He holds more than 50 Chinese patents, dozens of U.S. and Taiwanese patents, and published many academic papers. Dr. Kuo is a member of IEEE Electronic Packaging Society, selected as “Science and Technology Entrepreneur of Jiangsu Province” in 2018. He graduated from Taiwan Sun Yat-Sen University with PhD in electrical engineering.

GaN/SiC System Revolution in Power Electronics

与传统硅基材料相比，GaN 具有宽带隙、高电子迁移率和高击穿电场的特性，可提供快速充电速度和更高的功率效率。因此，GaN 已成为最受认可的下一代电力电子材料，它的应用市场在蓬勃发展，例如：消费类、汽车和工业市场中的 AC-DC 和 DC-DC 电源转换器，这是由市场对更高效的电源转换速度和低损耗要求所推动。 GaN 器件的封装要求具有良好的功率耗散处理能力，并在快速开关中最大限度地减少封装电感损耗。封装的发展趋势将是（1）芯片下方的高导热材料，（2）封装体内更高的传导密度以处理热流（3）通过SMD型封装最大限度地减少电感损耗。所有这些都是为了消除 GaN 器件与周围环境之间的障碍，以提供最直接的传导路径。